| 摘要 |
A method for forming quantum dots includes the following steps: (a) depositing a metal layer ( 4 ) on a substrate ( 2 ); (b) using an atomic force microscope (AFM) probe ( 6 ) to form a plurality of nanopores ( 42 ) in the metal layer ( 4 ); (c) depositing a semiconductor layer ( 3 ) on the metal layer and in the nanopores; and (d) removing the metal layer and the portions of the semiconductor layer located on the metal layer, thereby forming a plurality of quantum dots ( 82 ) on the substrate. The method does not use a photolithography technique, thus reduces or even avoids the possibility of forming various surface states. Furthermore, a potential effect of the thermal expansion coefficient of the metal is finite over the temperature range involved and thus the size of the nanopores, which are restricted by the metal layer, is essentially constant. Therefore, a size of the quantum dots is controllable.
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