| 摘要 |
<P>PROBLEM TO BE SOLVED: To make a threshold voltage variable without being accompanied by a leakage current flowing from a gate to a source, and to restrain an increase in element area. <P>SOLUTION: An insulating layer 102 is formed on a semiconductor substrate 101, a semiconductor layer 103 is formed on the insulating layer 102, an insulating layer 104 is formed on the semiconductor layer 103, and a semiconductor layer 105 is formed on the insulating layer 104. A gate electrode 107 is formed on the semiconductor layer 105 through the intermediary of a gate insulating film 106; a source layer 109 and a drain layer 110 are formed on the sides of the gate electrode 107, respectively; and the gate electrode 107 is connected to the semiconductor layer 103 through a wiring layer. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
