| 摘要 |
PROBLEM TO BE SOLVED: To provide a flip-chip connection method which can prevent damage on a chip active surface caused by fine dust by completely packing an underfill resin between a chip and a substrate even if the height of a gold stud bump reduces in accordance with a narrow pitch processing of a semiconductor chip. SOLUTION: In a method for performing flip-chip connection for a semiconductor chip on a substrate, an underfill resin comprising filler particle which satisfies PO-SRmax-10≤Fmax≤PO-SRmax and PO-SRmax-15≤Fave≤PO-SRmax [wherein the unit isμm, Fmax is a maximum filler grain diameter, Fave is an average filler grain diameter, PO is a chip pad opening width, and SRmax is the maximum thickness of a solder resist layer 22] is dropped on a flip-chip connection predetermined position on the substrate for forming a resin liquid bump, the chip-to-substrate clearance is held as prescribed by using filler particle held between the chip and the substrate as a spacer while widening the resin liquid bump by pressing the semiconductor chip from on the bump, the underfill resin is hardened, and the chip stud bump and a substrate solder bump are joined. COPYRIGHT: (C)2006,JPO&NCIPI |
