| 摘要 |
A semiconductor laser diode is provided. The semiconductor laser diode includes a substrate; a lower clad layer on a substrate; an active layer on the lower clad layer; and an upper clad layer on the active layer and having a ridge that protrudes in a vertical direction. In the upper clad layer, impurity layers are formed by diffusing impurities at both sides of the ridge to suppress high-order traverse-mode lasing. The impurities are Ga-ions free vacancies or Zn ions.
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