| 摘要 |
PROBLEM TO BE SOLVED: To provide a technology of applying high voltage to a trench insulation isolation section in the breakdown voltage screening test of the trench insulation isolation section. SOLUTION: The semiconductor device of an SOI (Silicon-On-Insulator) substrate comprises a substrate 2, an insulating layer 3 on the substrate 2, and a semiconductor layer 4 on the insulation layer 3; the SOI substrate is formed with element-forming regions 6a, 6b that are insulated and isolated by being laterally surrounded by the trench insulation isolation section 5U located from the surface of the semiconductor layer 4 to the insulating layer 3, and a non element-forming region 7 other than the element forming regions 6a, 6b. The fixed potential of the element forming regions 6a, 6b differs from a fixed potential of the non element-forming region 7, and a prescribed voltage is respectively applied to the element-forming regions 6a, 6b and the non element-forming region 7 for a prescribed time, to apply the breakdown voltage screening test to the trench insulation isolation section 5U. COPYRIGHT: (C)2006,JPO&NCIPI
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