TRANSISTORS HAVING BURIED N-TYPE AND P-TYPE REGIONS BENEATH THE SOURCE REGION AND METHODS OF FABRICATING THE SAME

摘要

The present invention provides a unit cell of a metal-semiconductor field-effect transistor (MESFET). The unit cell of the MESFET includes a source, a drain and a gate. The gate is disposed between the source and the drain and on an n-type conductivity channel layer. A p-type conductivity region is provided beneath the source and has an end that extends towards the drain. The p-type conductivity region is spaced apart from the n-type conductivity channel region and is electrically coupled to the source. An n-type conductivity region is provided on the p-type conductivity region beneath the source region and extending toward the drain region without extending beyond the end of the p-type conductivity region. Related methods of fabricating MESFETS are also provided.