| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor laser outgoing a laser beam in which the strength center of a far field pattern in the horizontal direction accompanied with an optical output variation doesn't fluctuate and a profile is stable. SOLUTION: The width of a trench 15 is set so that the ratio E1/E2 of the capacity E1 of an electric field at the center of a ridge 6 and the capacity E2 of an electric field at the edge of the trench 15 may be larger than 0.0001 and smaller than 0.01. In the semiconductor laser of a double-channel ridge structure, there exists outside the trench 15 a layer having an equivalent refractive index larger than that of the trench 15. Therefore, by an absorption caused by optical semiconductors distributing outside the trench 15, there can be obtained the laser beam in which the strength center of the far field pattern in the horizontal direction accompanied with the optical output variation doesn't fluctuate and the profile is stable. COPYRIGHT: (C)2006,JPO&NCIPI
|
