发明名称 |
Semiconductor device having overlay measurement mark and method of fabricating the same |
摘要 |
There are provided a semiconductor device having an overlay measurement mark, and a method of fabricating the same. The semiconductor device includes a scribe line region disposed on a semiconductor substrate. A first main scale layer having a first group of line and space patterns and a second group of line and space patterns is disposed on the scribe line region. Line-shaped second main scale patterns are disposed on space regions of the first group of the line and space patterns. Line-shaped vernier scale patterns are disposed on space regions of the second group of the line and space patterns. In the method, a first main scale layer having a first group of line and space patterns and a second group of line and space patterns is formed on a semiconductor substrate. Line-shaped second main scale patterns are formed on space regions of the first group of the line and space patterns. Line-shaped vernier scale patterns are formed on space regions of the second group of the line and space patterns.
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申请公布号 |
US2006131576(A1) |
申请公布日期 |
2006.06.22 |
申请号 |
US20050296921 |
申请日期 |
2005.12.08 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KOH CHA-WON;WOO SANG-GYUN;OH SEOK-HWAN;YEO GI-SUNG;KANG HYUN-JAE;SHIN JANG-HO |
分类号 |
H01L23/58 |
主分类号 |
H01L23/58 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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