<p>A method of forming an antireflective coating on an electronic device comprising (A) applying to an electronic device an ARC composition comprising (i) a silsesquioxane resin having the formula (PhSiO<SUB>(3-x)/2</SUB>(OH<SUB>x</SUB>)<SUB>m</SUB>HSiO<SUB>(3-x)/2</SUB>(OH)<SUB>x</SUB>)<SUB>n</SUB>, where Ph is a phenyl group, x has a value of 0, 1 or 2; m has a value of 0.05 to 0.95, n has a value of 0.05 to 0.95 and m + n ~ 1; and (ii) a solvent; and (B) removing the solvent and curing the silsesquioxane resin to form an antireflective coating on the electronic device.</p>
