| 摘要 |
PROBLEM TO BE SOLVED: To accomplish excellent Vg-Id characteristics by reducing a leak current in a thin film transistor. SOLUTION: A thin film transistor 300 comprises an island-shaped semiconductor layer 41 that is formed on the surface of a substrate 31 and includes a channel region 43, a source region, and a drain region 47; a gate insulating layer 35 covering the semiconductor layer 41; and a gate electrode 47 that is formed on the gate insulating layer 35 and covers the channel region 43 in the semiconductor layer 41. The channel region 43 contains an impurity for controlling the threshold voltage of the thin film transistor 300. The concentration of the impurity in a terminal 43b of the channel region 43 in a channel widthwise direction, and a concentration of the impurity in a central portion 43a of the channel region 43 in the channel width direction, are controlled so that a threshold in the terminal portion 43b in the channel widthwise direction becomes higher than a threshold in the central portion 43a in the channel widthwise direction. COPYRIGHT: (C)2006,JPO&NCIPI
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