| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a cutting method for semiconductor material substrate for enabling high precision cutting by preventing mechanical damages or large thermal damages to a semiconductor chip. <P>SOLUTION: The cutting method of semiconductor material substrate comprises the steps of irradiating a laser beam to the internal side of the semiconductor material substrate 11, under the condition that the peak power density at the focusing point be 1×10<SP>8</SP>(W/cm<SP>2</SP>) or higher, and the pulse width be 1μm or smaller and forming, into the semiconductor material substrate 11, a dissolving process region 13 including the region where the semiconductor material is re-solidified, after it has been once dissolved by relatively moving the focusing point and the semiconductor material substrate 11 along the planned cutting line of the semiconductor material substrate 11, and cutting the semiconductor material substrate 11 along the planned cutting line, by impressing an artificial force on the semiconductor material substrate 11. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p> |
