PROCESS FOR FABRICATING A SEMICONDUCTOR DEVICE HAVING AN RTCVD LAYER

摘要

A process of fabricating a semiconductor device includes forming a device region including a non-volatile memory element and forming a utility layer overlying the device region, where the utility layer is a dielectric material formed by RTCVD. The utility layer preferably has hydrogen content below that necessary to reduce the data retention of the non-volatile memory element in the device region. The utility layer can function as one or more of an etch-stop layer, a diffusion barrier layer, or an insulating layer.