发明名称 |
Shallow trench power MOSFET and IGBT |
摘要 |
A power semiconductor device includes a substrate having an upper surface and a lower surface. The substrate has a trench. First and second doped regions are provided proximate the upper surface of the substrate. A first source region is provided within the first doped region. A second source region is provided within the second doped region. A gate is provided between the first and second source regions. The gate includes a first portion extending downward into the trench. A depth of the trench is no more than a depth of the first doped region.
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申请公布号 |
US7063975(B2) |
申请公布日期 |
2006.06.20 |
申请号 |
US20030678479 |
申请日期 |
2003.10.03 |
申请人 |
IXYS CORPORATION |
发明人 |
TSUKANOV VLADIMIR;ZOMMER NATHAN |
分类号 |
H01L21/336;H01L21/331;H01L29/06;H01L29/10;H01L29/423;H01L29/739;H01L29/78 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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