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发明名称
具有一延迟的预充电电压施加点之区域资料线对的半导体记忆体装置
摘要
本发明揭示一种具有一延迟的预充电电压施加点之一对区域资料线的半导体记忆体装置。本发明之该半导体记忆体装置包括一用于延迟一区块写入控制讯号之启动时间的延迟区块,从而拉长自放大一对位元线上之资料之时间开始至将一电源电压施加于一对区域资料线之时间的时间间隔。因此,根据本发明之半导体记忆体装置,将该电源电压施加于该对区域资料线之时间即为在资料充分稳定于该对位元线上之后之时间。因此,本发明之半导体记忆体装置防止该对位元线及该对区域资料线之稳定化速度降低,从而提高该半导体记忆体装置之运作速度。
申请公布号
TW200620315
申请公布日期
2006.06.16
申请号
TW094123054
申请日期
2005.07.07
申请人
三星电子股份有限公司
发明人
李熙春;赵震炯
分类号
G11C7/12;H01L27/108
主分类号
G11C7/12
代理机构
代理人
陈长文
主权项
地址
韩国
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