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发明名称
互补式金属-氧化物-半导体场效电晶体结构
摘要
本发明系关于一种互补式金属–氧化物–半导体场效电晶体结构(100),其在两个互补式元件之仅一个中包括离子植入物(126、128)。该电晶体结构(100)通常包括一化合物半导体基板(102)及一磊晶层结构(104),该磊晶层结构包括一或多个为该磊晶层结构建立一电导型式之施体层。离子植入物于互补式元件中之一个元件中起作用以使该磊晶层结构(104)之电导型式“反转”或“逆转”。在例示性实施例中,于p通道元件(122)中利用p型受体植入物,而n通道元件(120)保持无植入物。
申请公布号
TW200620654
申请公布日期
2006.06.16
申请号
TW094123768
申请日期
2005.07.13
申请人
飞思卡尔半导体公司
发明人
玛西雅斯 派司雷克
分类号
H01L29/76;H01L21/265
主分类号
H01L29/76
代理机构
代理人
陈长文
主权项
地址
美国
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