| 摘要 |
The present invention provides a system for electrostatic discharge protection in a semiconductor device, utilizing a silicon-controlled rectifier ( 502 ). The system includes the silicon controlled rectifier, which has a first p-type region ( 508 ) coupled to a voltage node ( 504 ), a first n-type region ( 512 ) having a first side adjoining the first p-type region, a second p-type region ( 510 ) having a first side adjoining a second side of the first n-type region, and a second n-type region ( 514 ) having a first side adjoining a second side of the second p-type region. A clamping structure ( 506 ) is intercoupled between the second n-type region and ground, to prevent the junction between the second p-type region and the second n-type region from retaining a forward bias. A switching structure ( 518 ) is intercoupled between the second p-type region and ground to ground the second p-type region during normal operation of the semiconductor device.
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