发明名称 THIN FILM TRANSISTOR ARRAY PANEL AND METHOD FOR MANUFACTURING THE SAME
摘要 A TFT array panel including a substrate, a gate line having a gate electrode, a gate insulating layer formed on the gate line, a data line having a source electrode and a drain electrode spaced apart from the source electrode, a passivation layer formed on the data line and the drain electrode, and a pixel electrode connected to the drain electrode is provided. The TFT array panel further includes a protection layer including Si under at least one of the gate insulating layer and the passivation layer to enhance reliability.
申请公布号 KR20060064264(A) 申请公布日期 2006.06.13
申请号 KR20040103020 申请日期 2004.12.08
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 YANG, SUNG HOON;GIROTRA KUNALSATYABHUSHAN;KIM, BYOUNG JUNE
分类号 G02F1/136;H01L21/3205;H01L21/336;H01L21/768;H01L23/532;H01L29/417;H01L29/423;H01L29/49;H01L29/786 主分类号 G02F1/136
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