发明名称 |
Shallow trench isolation structures having uniform and smooth topography |
摘要 |
Ions are implanted into the dielectric layer and/or barrier layer over a semiconductor substrate to change the polish rates of either or both layers during formation of a shallow trench isolation (STI) structure. The ion implantation can change or affect the polish rates of the material and the polish selectivity, and reduce or minimize unwanted topography resulting from chemical mechanical polishing (CMP). After CMP, the resulting STI structure has a more uniform and smooth topography.
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申请公布号 |
US7061068(B2) |
申请公布日期 |
2006.06.13 |
申请号 |
US20040764751 |
申请日期 |
2004.01.26 |
申请人 |
INTEL CORPORATION |
发明人 |
PIPES LEONARD C.;SLILATY RITA |
分类号 |
H01L29/00;H01L21/3105;H01L21/4763;H01L21/76;H01L21/762 |
主分类号 |
H01L29/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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