摘要 |
A method for forming double-sided capacitors for a semiconductor device includes forming a dielectric structure (86) which supports capacitor bottom plates (110) during wafer processing. The structure is particularly useful for supporting the bottom plates during removal of a base dielectric layer (84) to expose the outside of the bottom plates to form a double-sided capacitor. The support structure further supports the bottom plates during formation of a cell dielectric layer (200), a capacitor top plate (202), and final supporting dielectric (204). An inventive structure is also described.
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