| 摘要 |
PROBLEM TO BE SOLVED: To provide a solid state imaging device which suppresses the generation of an unnecessary offset electric charge produced by pulse drive. SOLUTION: The solid state imaging device comprises a photosensitivity region 101 where unit pixel is arranged by two dimensions which contains a photodiode 11 for generating a signal charge by photoelectric conversion of the incident light, a transfer transistor 12 for transferring a signal charge, an amplification transistor 14 for amplifying the transferred signal charge, and a reset transistor 13 for discharging the transferred signal charge; and a peripheral circuit NMOS 102 containing an NMOS transistor 7 for reading out the signal charge by driving selectively the unit pixel consisting of the photosensitivity region 101. The photosensitivity region 101 is formed in a first p-type well 3a on an n-type semiconductor substrate 1, and the peripheral circuit NMOS 102 is formed in a second p-type well 3b on the n-type semiconductor substrate 1 in such a way that the first p-type well 3a and the second p-type well 3b are separated. COPYRIGHT: (C)2006,JPO&NCIPI
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