| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor laser having a symmetrical vertical ridge structure and in which part of a surface damaged by dry etching is removed, and to provide a manufacturing method therefor. SOLUTION: A first conductivity type clad layer 32, an active layer 33, and a second conductivity type clad layer 34 are sequentially formed on a substrate 31. A first mask M1 is formed on a ridge forming region of the second conductivity type clad layer. The second conductivity type clad layer is dry-etched to form a ridge structure having a side section vertical to the upper part of the second conductivity type clad layer, and a second mask M2 is formed that covers the side section vertical to the upper surface of the ridge structure. The upper surface of the second conductivity type clad layer is wet-etched to remove a part of the second conductivity type clad layer that is damaged by the dry-etching, and a current interruption layer 37 is formed on the second conductivity type clad layer such that the upper surface of the ridge structure is opened. The GaAs-based semiconductor laser is manufactured in this manner. COPYRIGHT: (C)2006,JPO&NCIPI
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