APPARATUS FOR FABRICATING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a novel apparatus for fabricating a semiconductor device without using plasma as a means for removing a high resistance layer on the bottom of a via before a barrier metal is deposited on a low dielectric constant insulating film having a void. SOLUTION: In the apparatus for fabricating a semiconductor device including a metal film interconnect line 103 employing a low dielectric constant film 102 having a relative dielectric constant of less than 3 as an interlayer film, gas is introduced by regulating the temperature of piping of reducing gas having a chamber when thermal reduction processing is carried out with the reducing gas or mixture gas containing the reducing gas before a barrier metal is deposited between the metal film interconnect line 103 and the interlayer film. COPYRIGHT: (C)2006,JPO&NCIPI