发明名称 |
PROCESS FOR PRODUCING POLYCRYSTALLINE SILICON INGOT |
摘要 |
<p>A process in which a polycrystalline silicon ingot improved in life time characteristics, which are correlated with the conversion efficiency of solar wafers, is inexpensively produced by the ordinary-pressure hydrogen-atmosphere melt method. In the process, the generation of oxygen and impurities in the silicon melt is inhibited and light-element impurities are removed through reaction or crystallization. Fine crystal grains can be grown at a high rate, and a high-purity polycrystalline silicon ingot having a crystal structure reduced in crystal defect can be grown. A silicon raw material is melted in an atmosphere of 100% hydrogen at ordinary pressure or an elevated pressure to prepare a silicon melt and simultaneously dissolve hydrogen in the silicon melt. The silicon melt containing hydrogen dissolved therein is solidified. Thereafter, the solid is held at a high temperature around the solidification temperature to grow silicon crystal grains in the solid phase and thereby obtain a polycrystalline silicon ingot.</p> |
申请公布号 |
WO2006059632(A1) |
申请公布日期 |
2006.06.08 |
申请号 |
WO2005JP21969 |
申请日期 |
2005.11.30 |
申请人 |
SPACE ENERGY CORPORATION;NORITAKE TCF CO., LTD.;KIMURA, YOSHIMICHI;SAKAI, YUICHI |
发明人 |
KIMURA, YOSHIMICHI;SAKAI, YUICHI |
分类号 |
C01B33/02 |
主分类号 |
C01B33/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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