| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a good quality silicon carbide (SiC) single crystal at a high growth rate by using a relatively easily available raw material so as to realize mass production, in the manufacturing of the SiC single crystal by a solution growth method, comprising growing the SiC single crystal on a seed crystal substrate from a solution obtained by dissolving SiC into a solvent comprising a molten Si alloy. <P>SOLUTION: The SiC single crystal is grown on an SiC seed crystal substrate by immersing the SiC seed crystal substrate into a melt of an alloy, which contains Si, C and M (M is one or both of Fe and Co) and in which the value of [M]/([M]+[Si]) (wherein, [M] expresses molar concentration of M; and [Si] expresses molar concentration of Si) is 0.2-0.7 when M is Fe or 0.05-0.25 when M is Co, and making the alloy melt at least in the periphery of the seed crystal substrate into the supersaturated state of SiC (e.g., by forming a temperature gradient in the melt or by cooling or concentrating the melt). <P>COPYRIGHT: (C)2006,JPO&NCIPI</p> |
