发明名称 CIRCUIT SIMULATION APPARATUS
摘要 PROBLEM TO BE SOLVED: To provide an ESD-immune circuit simulation apparatus for a semiconductor integrated circuit that improves the convergence property while ensuring accuracy of an ESD circuit simulation result without requiring an ESD device model designation capability. SOLUTION: An ESD device model 7 additionally describing overvoltage/overcurrent characteristics in a standard device model 6 and ESD operation validity determination conditions 12 describing conditions for replacing the standard device model 6 with the ESD device model 7 are set, terminal voltages of a semiconductor device are extracted during transient analysis of circuit operation, the extracted terminal voltages of the semiconductor device are compared with the ESD operation validity determination conditions 12 to select the ESD device model 7 meeting the ESD operation validity determination conditions 12, namely, the ESD device model 7 optimal for an ESD signal is allocated, and this ESD device model 7 is used to carry out circuit simulation. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006148029(A) 申请公布日期 2006.06.08
申请号 JP20040339696 申请日期 2004.11.25
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 HASEGAWA KOICHI
分类号 H01L27/04;G06F17/50;H01L21/822;H01L29/00 主分类号 H01L27/04
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