| 摘要 |
PROBLEM TO BE SOLVED: To simplify a configuration while improving chromaticity in light, and to improve manufacturing efficiency in a light-emitting device having TFTs. SOLUTION: The light-emitting device 100 comprises a plurality of light-emitting elements 7a, having an electrode 4 connected to a TFT 2, an electrode 9 arranged opposite to the electrode 4, and a luminous layer 7 arranged between respective electrodes 4, 9. The TFT 2 is formed at the boundary section of the adjacent light-emitting element 7a, and comprises an island-shaped semiconductor layer 13, a gate insulating layer 15 formed while being spread over the formation region of the light-emitting element 7a on the semiconductor layer 13, a gate electrode 12 formed on the gate insulating layer 15, an interlayer insulating layer 18 formed while being spread to the formation region of the light-emitting element 7a on the gate insulating layer 15 containing the gate electrode 12, and a source electrode 11 and a drain electrode 10 formed on the interlayer insulating layer 18. The interlayer insulating layer 18 has a plurality of light-transmitting dielectric layers 16a, 17a having a different refractive index. COPYRIGHT: (C)2006,JPO&NCIPI
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