| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a cerium oxide polishing material whose properties are stable and which can always polish the surface to be evenly polished of a silicon oxide insulating film at a high speed; and a semiconductor device polishing method using the cerium oxide polishing material. <P>SOLUTION: The cerium oxide polishing material for polishing a semiconductor device or for polishing a silicon oxide insulating film contains a copolymer, copolymerized with ammonium acrylate acid and methyl acrylate, and cerium oxide, and is composed of a slurry whose concentration of sulfate ion to cerium oxide particle part is less than 5,000 mg/kg. The polishing method is employed for polishing the semiconductor device or the silicon oxide insulating film with the cerium oxide polishing material. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p> |
