| 摘要 |
PROBLEM TO BE SOLVED: To operate a tunnel effect element which shows negative differential resistance characteristic and to increase a peak current value. SOLUTION: The semiconductor element has a first semiconductor region 11 constituting a channel region; a gate electrode 13 formed on the region 11 via a gate insulating film 12; a source electrode 14 and a drain electrode 15 formed in both sides of the region 11 corresponding to the gate electrode 13; an n<SP>+</SP>type second semiconductor region 16 which is formed between the region 11 and the source electrode 14, and has higher impurity concentration than the region 11, and a p<SP>+</SP>type third semiconductor region 17 which is formed between the region 11 and the drain electrode 15, and has a higher impurity concentration than the region 11. The part of the semiconductor regions 16, 17 in contact with the channel region is depleted all over a channel length direction with no voltage applied, and a tunnel diode is formed between the channel region and the semiconductor regions 16, 17. COPYRIGHT: (C)2006,JPO&NCIPI
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