SILICON CARBIDE MOS FIELD-EFFECT TRANSISTOR AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide the structure wherein a high proof-pressure SiC vertical MOSFET having the channel region formed by a low concentration p-type deposited layer can be manufactured with the sufficient yield, and to provide a manufacturing method. SOLUTION: Between a low concentration p-type deposited film and a high concentration gate layer, a low concentration n-type deposited film is made to be interposed. Further, the base region led back to n-type by ion implantation is selectively formed in a low concentration p-type deposited film, so that the thickness of a deposited film between the high concentration gate layer and the channel region and gate oxide film is enlarged. COPYRIGHT: (C)2006,JPO&NCIPI