THIN FILM DEVICE, ITS FABRICATION PROCESS, INTEGRATED CIRCUIT, MATRIX DEVICE, ELECTRONIC APPARATUS

摘要

PROBLEM TO BE SOLVED: To provide a technique for securing good bonding state between thin film element layers. SOLUTION: The thin film device comprises: a first thin film element layer (13); a second thin film element layer (23); a first terminal layer (15) including a first electrode terminal (16) formed between the first and second thin film element layers on the first thin film element layer side and connected electrically with the first thin film element layer, and a first nonconduction terminal (17) having a thickness substantially identical to that of the first electrode terminal and not connected electrically with the first thin film element layer; and a second terminal layer (25) including a second electrode terminal (26) formed between the first and second thin film element layers on the second thin film element layer side and connected electrically with the second thin film element layer, and a second nonconduction terminal (27) having a thickness substantially identical to that of the second electrode terminal and not connected electrically with the second thin film element layer. The first and second electrode terminals are bonded, and the first and second nonconduction terminals are also bonded. COPYRIGHT: (C)2006,JPO&NCIPI