| 摘要 |
PROBLEM TO BE SOLVED: To grow a high-quality crystal with high yield by restricting a defect occurring in a growing crystal to a peripheral portion of the crystal. SOLUTION: A crystal manufacturing apparatus is provided to grow a crystal by placing a seed crystal 14 in a crucible 11 held in a furnace, heating and melting a source material solution 12 filled in the crucible 11, and gradually cooling the source material solution 12 upward from a lower part of the crucible, wherein the seed crystal 14 is placed at a position away from the center axis of the crucible 11. COPYRIGHT: (C)2006,JPO&NCIPI
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