发明名称 RINSING LIQUID FOR LITHOGRAPHY
摘要 PROBLEM TO BE SOLVED: To provide a new rinsing liquid for manufacturing high-quality products by modifying the surface of a resist pattern to have≥70°contact angle and rapidly and effectively preventing pattern collapse in a process of forming a resist pattern by lithography techniques. SOLUTION: The rinsing liquid for lithography comprises a solution containing (A) a water-soluble fluorine compound and (B) an organosilane compound. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006145897(A) 申请公布日期 2006.06.08
申请号 JP20040336579 申请日期 2004.11.19
申请人 TOKYO OHKA KOGYO CO LTD 发明人 SAWADA YOSHIHIRO;WAKIYA KAZUMASA;KOSHIYAMA ATSUSHI;MIYAMOTO ATSUSHI;TAJIMA HIDEKAZU
分类号 G03F7/32;H01L21/027 主分类号 G03F7/32
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