| 摘要 |
PROBLEM TO BE SOLVED: To improve tunnel transmittance of electrons without thinning an insulating layer more than required. SOLUTION: The tunnel magnetoresistance element is formed by laminating an n-type silicon layer 13, a magnetic metal pin layer 14, an aluminum oxide layer 15, and a magnetic metal layer 16 being a free layer. The work functionϕM of the magnetic metal layer 14 is larger than the work functionϕS of the n-type silicon layer 13. A Schottky barrier is formed in the interface of the n-type silicon layer 13 and the magnetic metal layer 14. When voltage is applied, a part of electrons passing through the Schottky barrier penetrate the aluminum oxide layer 15 as tunnel current. Remaining electrons are reflected by the aluminum oxide layer 15 and they go to the Schottky barrier. A part of them are reflected by the Schottky barrier and they go to the aluminum oxide layer 15 again. COPYRIGHT: (C)2006,JPO&NCIPI
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