METHOD OF FORMING A THROUGH-SUBSTRATE INTERCONNECT

摘要

A method of manufacturing a microelectronics device is provided, wherein the microelectronics device is formed on a substrate (20) having a frontside (24) and a backside (28). The method comprises forming a circuit element on the frontside (24) of the substrate (20) from a plurality of layers deposited on the frontside of the substrate (20), wherein the plurality of layers includes an intermediate electrical contact layer (34), and forming an interconnect structure (50) after forming the electrical contact layer (34). The interconnect structure (50) includes a contact pad (54) formed on the backside (28) of the substrate (20), and a through-substrate interconnect (52) in electrical communication with the contact pad (54), wherein the through-substrate interconnect (52) extends from the backside (28) of the substrate (20) to the electrical contact layer (34).