发明名称 |
Liquid-assisted cryogenic cleaning |
摘要 |
The present invention is directed to the use of a high vapor pressure liquid prior to or simultaneous with cryogenic cleaning to remove contaminants from the surface of substrates requiring precision cleaning such as semiconductors, metal films, or dielectric films. A liquid suitable for use in the present invention preferably has a vapor pressure above 5 kPa and a freezing point below -50° C.
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申请公布号 |
US7056391(B2) |
申请公布日期 |
2006.06.06 |
申请号 |
US20040886251 |
申请日期 |
2004.07.07 |
申请人 |
BOC, INC. |
发明人 |
BANERJEE SOUVIK;CHUNG HARLAN FORREST |
分类号 |
B08B3/00;B08B3/04;B08B7/00;B24C1/00;C23G5/00;H01L21/00;H01L21/306 |
主分类号 |
B08B3/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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