METHOD FOR FABRICATING GAN-BASED NITRIDE LAYER,申请号KR20040098824-传众专利搜索

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发明名称	METHOD FOR FABRICATING GAN-BASED NITRIDE LAYER
摘要
申请公布号	KR20060059671(A)	申请公布日期	2006.06.02
申请号	KR20040098824	申请日期	2004.11.29
申请人	EPIVALLEY CO., LTD.	发明人	JEON, SOO KUN;JANG, MOON SIK;YOO, TAE KYUNG
分类号	H01L33/20	主分类号	H01L33/20
代理机构		代理人
主权项
地址

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