发明名称 |
Field effect transistor |
摘要 |
A novel field-effect transistor is provided which employs an amorphous oxide. In an embodiment of the present invention, the transistor comprises an amorphous oxide layer containing electron carrier at a concentration less than 1x10<SUP>-18</SUP>/cm<SUP>3</SUP>, and the gate-insulating layer is comprised of a first layer being in contact with the amorphous oxide and a second layer different from the first layer.
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申请公布号 |
US2006113539(A1) |
申请公布日期 |
2006.06.01 |
申请号 |
US20050269647 |
申请日期 |
2005.11.09 |
申请人 |
TOKYO INSTITUTE OF TECHNOLOGY |
发明人 |
SANO MASAFUMI;NAKAGAWA KATSUMI;HOSONO HIDEO;KAMIYA TOSHIO;NOMURA KENJI |
分类号 |
H01L29/04;H01L27/12;H01L31/0376 |
主分类号 |
H01L29/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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