Plasma etch process for multilayer vias having an organic layer with vertical sidewalls

摘要

A process is provided for fabricating a via 52 between bonded wafers without undercutting an organic bonding material 32 . The process for forming the via 52 in a structure including a dielectric material 14 and an organic bonding material 32 , comprises forming a resist material 42 on the dielectric layer 14 and etching through the dielectric layer 14 and the organic bonding material 32 with 60CF₄/20Ar/60CHF₃/20N₂. The resist may then be removed with an anisotropic high density oxygen plasma.