METHOD FOR PRODUCING TARGET FOR FORMING PHASE CHANGE RECORDING FILM WITH WHICH PRESPUTTERING TIME IS SHORTENED

摘要

PROBLEM TO BE SOLVED: To provide a method for producing a target for forming a phase change recording film used for a phase change RAM (Random Access Memory) as one kind of a semiconductor nonvolatile memory with which presputtering time is shortened.

SOLUTION: Regarding the method for producing a target for forming a phase change recording film with which presputtering time is shortened, in a method of producing a target for forming a phase change recording film by subjecting raw material powder to pressure sintering, as the raw material powder, gas atomizing powder is used.

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