SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SUBSTRATE PROCESSING EQUIPMENT

摘要

A high quality semiconductor device is manufactured by improving controllability of a concentration ratio of metal atoms to silicon atoms in a metal silicate film. A semiconductor device manufacturing method is provided with a process of forming a metal silicate film, including metal atoms and silicon atoms, on a substrate (30), by supplying a process chamber (4) with a first material including metal atoms and a second material including silicon atoms and nitrogen atoms. In the process of forming the metal silicate film, the concentration ratio of the metal atoms to the silicon atoms in the metal silicate film to be formed is controlled by controlling a material supply ratio of the first material to the second material.