| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for repairing a semiconductor memory device having an open bitline structure. SOLUTION: When three word lines are simultaneously activated from one cell array block, a redundancy cell to replace a defective memory cell connected to one of the three word lines is selected. Whether to enable the word line connected to the defective memory cell is decided, and a sense amplifier connected to the defective memory cell is disabled. Whether to enable the word line of a memory cell corresponding to a bitline overlappingly selected by the replacement by the redundancy cell is decided. The sense amplifier of the memory cell corresponding to the overlappingly selected bitline is disabled. The redundancy cell is enabled. When a defect occurs in an edge subblock or a dummy subblock, a repair process is carried out with efficiency equal to that when a defect occurs in a main subblock. COPYRIGHT: (C)2006,JPO&NCIPI
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