发明名称 Method for forming low defect density alloy graded layers and structure containing such layers
摘要 A structure and method of forming same, comprising a low threading density alloy graded layer, deposited according to a deposition temperature profile in correspondence with increasing alloy composition. In one embodiment, a first substantially relaxed alloy graded layer is deposited while varying a deposition temperature according to a first temperature profile. A second substantially relaxed alloy graded layer is deposited over the first graded layer while varying a deposition temperature according to a second temperature profile. Preferably, the minimum signed rate of change of the second temperature profile is less than the maximum signed rate of change of the first temperature profile.
申请公布号 US2006113542(A1) 申请公布日期 2006.06.01
申请号 US20040999486 申请日期 2004.11.30
申请人 MASSACHUSETTS INSTITUTE OF TECHNOLOGY 发明人 ISAACSON DAVID M.;FITZGERALD EUGENE A.
分类号 H01L29/12;H01L21/20 主分类号 H01L29/12
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