METHOD AND SYSTEM FOR PERFORMING IN-SITU CLEANING OF A DEPOSITION SYSTEM

摘要

A method for depositing metal layers, such as Ruthenium, on semiconductor substrates (25, 125) by a thermal chemical vapor deposition (TCVD) process includes introducing a metal carbonyl precursor in a deposition system (1, 100), and depositing a metal layer from the metal carbonyl on a substrate (25, 125). The TCVD process utilizes a short residence time for the gaseous species in the processing zone (33, 133) above the substrate (25, 125) to form a low-resistivity metal layer. In the deposition system (1, 100), the metal carbonyl is evaporated in a solid precursor evaporation system (50, 150), and the precursor vapor is transported to the process chamber (10, 110) via a vapor delivery system (40, 140). Further, an in-situ cleaning system (70, 170) is coupled to the vapor delivery system (40, 140) in order to perform periodic cleaning of the deposition system (1, 100). Periodic in-situ cleaning permits achieving a greater deposition rate by operating the deposition system (1, 100) at higher temperature where precursor vapor can decompose and potentially deposit on surfaces of the deposition system (1, 100).