SEMICONDUCTOR MEMORY DEVICE PERMITTING TO WRITE VARIOUS PATTERN DATA THEREIN, ELECTRICAL TEST METHOD THEREFOR

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor memory device permitting to write a data pattern consisting of bit-string data including at least one or more zero logic, and to provide an electrical test method therefor. SOLUTION: The semiconductor memory device comprises; two or more memory cells arranged in a memory cell array (106) for storing data; an address terminal (104) for specifying individual memory cells; two or more input-output terminals for integration (MDQ0 to MDQ7) for integrating input terminals connected to each memory cell for each N pieces of input-output terminals in a memory cell array test mode for writing the data in the specified memory cells at the address terminal and for reading the data from the specified memory cells at the address terminal; and a control signal generation terminal (100) for controlling the operation of each integrating input-output terminal and writing the data pattern consisting of the bit-string data including at least one one or more zero logic in the memory cell array in the memory cell array test mode. COPYRIGHT: (C)2006,JPO&NCIPI