| 摘要 |
PROBLEM TO BE SOLVED: To form a silicide film larger in MOSFET which applies a silicide process. SOLUTION: For example, on the side face of a gate electrode 16 formed on the surface of a silicon substrate 11, an inside gate side wall film 18 and an outside gate side wall film 21 are formed. On the surface of the silicon substrate 11 except for a portion where the gate electrode 16 is formed, a shallow low-concentration diffusion layer 17 and a two-step layer composed of a shallow high-concentration diffusion layer 19 and a deep high-concentration diffusion layer 22 are formed. On the surface of the silicon substrate 11 corresponding to the shallow high-concentration diffusion layer 19 and the deep high-concentration diffusion layer 22, two-step structure silicide films 23 are formed having different thicknesses corresponding to depths of the high-concentration diffusion layers 19 and 22. COPYRIGHT: (C)2006,JPO&NCIPI
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