发明名称 ION BEAM PROCESSING DEVICE AND MANUFACTURING METHOD OF SAMPLE
摘要 PROBLEM TO BE SOLVED: To provide a method and a device for separating a sample for analysis from a wafer without staining it by such an element as Ga which is problematic to wafer processing. SOLUTION: The ion beam processing device has a vacuum container 41, and the inside of the vacuum container is constructed by a duoplasmatron 81, an ion beam lens 82, and an objective diaphragm 83 or the like. A micro-sample 6 is extracted from a substrate by oxygen ion beam irradiation and a silicon probe 3. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006139917(A) 申请公布日期 2006.06.01
申请号 JP20040325811 申请日期 2004.11.10
申请人 HITACHI HIGH-TECHNOLOGIES CORP 发明人 SHICHI HIROYASU;FUKUDA MUNEYUKI;KANEOKA NORIYUKI;UMEMURA KAORU
分类号 H01J37/31;G01N1/28;G01N1/32;H01J37/20;H01J37/317 主分类号 H01J37/31
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