发明名称 |
ION BEAM PROCESSING DEVICE AND MANUFACTURING METHOD OF SAMPLE |
摘要 |
PROBLEM TO BE SOLVED: To provide a method and a device for separating a sample for analysis from a wafer without staining it by such an element as Ga which is problematic to wafer processing. SOLUTION: The ion beam processing device has a vacuum container 41, and the inside of the vacuum container is constructed by a duoplasmatron 81, an ion beam lens 82, and an objective diaphragm 83 or the like. A micro-sample 6 is extracted from a substrate by oxygen ion beam irradiation and a silicon probe 3. COPYRIGHT: (C)2006,JPO&NCIPI
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申请公布号 |
JP2006139917(A) |
申请公布日期 |
2006.06.01 |
申请号 |
JP20040325811 |
申请日期 |
2004.11.10 |
申请人 |
HITACHI HIGH-TECHNOLOGIES CORP |
发明人 |
SHICHI HIROYASU;FUKUDA MUNEYUKI;KANEOKA NORIYUKI;UMEMURA KAORU |
分类号 |
H01J37/31;G01N1/28;G01N1/32;H01J37/20;H01J37/317 |
主分类号 |
H01J37/31 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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