| 摘要 |
A high-frequency switch circuit arrangement. A plurality of stages (for example, two stages) of capacitative elements connected in series (C 11 and C 12 , C 21 and C 22 ) are used in a shunt path of a high-frequency component. If a surge voltage is applied, the voltage that each capacitative element should bear decreases in inverse proportion to the number of the connection stages. Consequently, the surge resistance of the capacitative element is improved. The capacitative elements connected in series can be manufactured using the usual manufacturing process of compound semiconductor devices and if the structure of the invention is adopted, a protective diode need not be provided. As the capacity is made common and the device structure is designed, the high-frequency switch circuit arrangement can be further made compact, etc.
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