| 摘要 |
1,158,218. Electroluminescence. SIEMENS A.G. 14 Nov., 1967 [15 Nov., 1966] No. 51721/67. Heading C4S. [Also in Division H1] A luminescent device comprises a semiconductive substrate of Si for example carrying a layer of luminescent material, e.g. ZnS, ZnO or KCl, at least one doping substance such as Cu, Ag or Tl being incorporated in the layer with a locally varying distribution. The doping substance may be such as to produce or suppress luminescence. In a preferred embodiment suitable as a display device for colour television the monocrystalline N-type semiconductor plate 7 is provided by localized diffusion with cylindrical P-type regions 9 so that a very large number of cylindrical PN junctions is formed in a regular pattern. The luminescent layer 8 deposited by epitaxy has a corresponding number of doped areas 10, each of which radiates light of the appropriate colour when the underlying PN junction is energized via electrodes 11, 12. Alternatively, the areas 10 may be energized by means of a transparent covering electrode 14 and a series of auxiliary electrodes (not shown) provided by the plate 7. The dopants may be caused to enter the layer 8 by diffusion of the variably distributed dopants from within semi-conductor body 7 or a layer deposited thereon or by chemical reaction. Dopant penetration to a depth of 100 to 1000Š is mentioned. |
