发明名称 |
Method of forming a field effect transistor having a stressed channel region |
摘要 |
A semiconductor structure comprises a transistor element formed in a substrate. A stressed layer is formed over the transistor element. The stressed layer has a predetermined compressive intrinsic stress having an absolute value of about 1 GPa or more. Due to this high intrinsic stress, the stressed layer exerts considerable elastic forces to the channel region of the transistor element. Thus, compressive stress is created in the channel region. The compressive stress leads to an increase of the mobility of holes in the channel region.
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申请公布号 |
US2006113641(A1) |
申请公布日期 |
2006.06.01 |
申请号 |
US20050177774 |
申请日期 |
2005.07.08 |
申请人 |
HOHAGE JOERG;RUELKE HARTMUT;FROHBERG KAI |
发明人 |
HOHAGE JOERG;RUELKE HARTMUT;FROHBERG KAI |
分类号 |
H01L23/58;H01L21/302 |
主分类号 |
H01L23/58 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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