| 摘要 |
PROBLEM TO BE SOLVED: To form a sidewall spacer without shaving a semiconductor substrate in a process for forming the LDD (Lightly-Doped Drain) of an MOS transistor. SOLUTION: This method for manufacturing a semiconductor device comprises a step for forming a gate electrode 102 on a semiconductor substrate 100 through a gate insulating film 101, a step for depositing an organic/inorganic hybrid film 106 represented by SiC<SB>w</SB>H<SB>x</SB>O<SB>y</SB>N<SB>z</SB>(w>0, x≥0, y>0, z≥0) to cover the gate electrode 102, a step for transforming a predetermined portion of the organic/inorganic hybrid film 106 into an oxidation layer 108, a step for removing the oxidation layer 108 selectively so that a sidewall spacer 109 composed of the organic/inorganic hybrid film is formed on the sidewall of the gate electrode 102. COPYRIGHT: (C)2006,JPO&NCIPI
|
